Products

Power Amplifier

This MMIC is a High Power Amplifier designed for Ku-band applications, specifically for a frequency range of 16 - 17 GHz. The power amplifier provides a saturated power of 39 dBm, a power added efficiency around 30 % and a linear gain rising to 25 dB. The chip is matched to 50 ohms, so the addition of external DC Blocks and RF port matching is not required.

ParameterVal.
Frequency [GHz]16-17
PSAT [dBm]39
Power Added Efficiency [%]28
Linear Power [dBm]38
Input/Output Return Loss [dB]-12
Gain @ PSAT [dB]20
Linear Gain [dB]25
Supply [V]10
Area [µm2]3500x5000
ProcessGaN OMMIC

LNA

This MMIC is a four-stage K-band Low-Noise Amplifier (LNA) that operates in the upper end of the K-band (25.5 GHz up to 27 GHz). It achieves a gain of 29.5 dB with 1 dB ripple, a Noise Figure (NF) as low as 1 dB and an Input Return Loss better than -10 dB across the band. The chip is matched to 50 ohms, therefore the addition of external DC Blocks and RF port matching is not required.

ParameterVal.
Freq. Range [GHz]25.5-27
Gain [dB]29.5 ±1
Noise Figure [dB]1
Input Return Loss [dB]-12
Output Return Loss [dB]-20
Supply [V]1.2
Area [µm2]2500x1750
ProcessGaAs 70 nm

Mixer

An SSB Sub-Harmonically Pumped Mixer. This circuit is intended for Ku-band applications, specifically to provide an output signal frequency range of 13.75- 14.5 GHz when applying a 1.5-2.7 GHz input signal and a 5.9-6.1 GHz Local Oscillator signal. The MMIC has a 13.9 dB conversion loss and a sideband rejection of 55.701 dBc. It is matched to 50 ohms, so the addition of external DC Blocks and RF port matching is not required.

ParameterVal
Input frequency [GHz]1.5-2.7
LO frequency [GHz]5.9-6.1
Output frequency [GHz]13.75-14.5
Input signal power [dBm]-10
LO signal power [dBm]20
Losses [dB]13.974
Sideband rejection [dBc]56
LO signal power level @ output [dBm]-50
Area [µm2]2740x1622
ProcessGaN OMMIC

Low Noise Amplifier

This MMIC is a four-stage K-band Low-Noise Amplifier (LNA) that operates in the upper end of the K-band (25.5 GHz up to 27 GHz). It achieves a gain of 31.7 dB with 1 dB ripple, a Noise Figure (NF) as low as 1.6 dB and an Input Return Loss better than -10 dB across the band. The chip is matched to 50 ohms, therefore the addition of external DC Blocks and RF port matching is not required.

ParameterVal.
Freq. Range (GHz)25.5-27
Gain [dB]31.7 ±1.5
Noise Figure (dB)1.6
Input Return Loss (dB)–10
Output Return Loss (dB)–5
Supply [V]2
Area [µm2]3200 x 1720
ProcessGaAs UMS

Temperature Sensor

CMOS Temperature Sensor for on-chip thermal management. The core of the sensor is designed to present a high temperature sensitivity with a very low power consumption. A conventional pseudo-differential pair is employed as op-amp to regulate the current mirror biasing.

ParameterVal.
Technology Process130 nm SiGe BiCMOS
Supply (V)1.2
Tº Range (ºC)0 ~ 100
Tº Coefficient (mV/ºC)-2.1
Inaccuracy (ºC)±3
Calibration schemeOne-point
Chip size (μm2)434
Power consumption (μW)102
ProcessIHP SiGe BiCMOS

Other design capacities

GaN Driver Amplifier design and layout

Custom four-stage Driver Amplifier using OMMIC’s D01GH technology and simulated, but not manufactured yet. The resulting amplifier can achieve a maximum gain of 50.5dB with input and output matching below -20 dB at 14 GHz.

GaAs mixer design and layout

GaAs version developed using OMMIC’s ED02AH technology. The resulting design achieves a good image rejection and acceptable gain losses.

GaAs Driver Amplifier design and layout

We have also designed a 5-stage GaAs ED02AH Ku-band Driver Amplifier up to the layout stage, obtaining a gain of 53.809 dB and an input and output matching below -18 dB at 14 GHz.

Design and modelling of custom inductors in GaN on Si, GaAs and SiGe processes.

At WIMMIC we have experience in the use of electro-magnetic simulators and in the design of custom inductors in different technologies. In this custom inductor catalogue we can find tapered octagonal and square inductors, solenoid inductors and many other options to suit the design’s requirements.

Radiation hardened circuits

We have experience in the design of radiation hardened by design RF and communications circuits. We have performed several studies regarding the effect of heavy ions in semiconductor devices, both in CMOS and GaN processes. With the information obtained in these studies, we have developed RF circuits that are robust against single event transients (SETs). Specifically, we have focused on the design of low-noise amplifiers (LNAs) that include several mitigation techniques that make them inherently robust against radiation. We have also performed studies regarding the propagation of SETs in RF systems such as receivers.

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WIMMIC is a reality thanks to the European Union SMEs policy. Our company received funding from Horizon 2020 EU Framework Programme for Research and Innovation under SME Instrument programme, grant agreement Nº 828346. WIMMIC also received funding from the European Regional Development Fund through EATIC 2018 – ACIISI Programme, Government of the Canary Islands.